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1. product profile 1.1 general description a 500 w ldmos rf power transistor for broadca st transmitter applications and industrial applications. the excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. [1] measured [dbc] with delta marker at 4.3 mhz from center frequency. [2] par (of output signal) at 0.01 % probability on ccdf; pa r of input signal = 9.5 db at 0.01 % probability on ccdf. 1.2 features and benefits ? excellent ruggedness ? optimum thermal behavi or and reliability, r th(j-c) = 0.15 k/w ? high power gain ? high efficiency ? designed for broadband operation (470 mhz to 860 mhz) ? internal input matching for high gain and optimum broadband operation ? excellent reliability ? easy power control ? compliant to restriction of hazardous substances (rohs) directive 2002/95/ec 1.3 applications ? communication transmitter applications in the uhf band ? industrial applicatio ns in the uhf band blf879p; BLF879PS uhf power ldmos transistor rev. 3 ? 12 july 2013 product data sheet table 1. application information rf performance at v ds = 42 v unless otherwise specified. mode of operation f p l(av) p l(m) g p ? d imd3 imd shldr par (mhz) (w) (w) (db) (%) (dbc) (dbc) (db) rf performance in a common source 860 mhz narrowband test circuit 2-tone, class-ab f 1 = 860; f 2 = 860.1 200 - 21 47 ? 33 - - dvb-t (8k ofdm) 858 95 - 21 33 - ? 31 [1] 8.2 [2] rf performance in a common source 470 mhz to 860 mhz broadband test circuit dvb-t (8k ofdm) 858 95 - 20 32 - ? 32 [1] 8.0 [2]
blf879p_BLF879PS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 2 of 16 nxp semiconductors blf879p; BLF879PS uhf power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol blf879p (sot539a) 1drain1 2drain2 3gate1 4gate2 5source [1] BLF879PS (sot539b) 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 43 4 3 5 1 2 sym117 5 12 43 4 3 5 1 2 sym117 table 3. ordering information type number package name description version blf879p - flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a BLF879PS - earless flanged balanced ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 104 v v gs gate-source voltage ? 0.5 +11 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c blf879p_BLF879PS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 3 of 16 nxp semiconductors blf879p; BLF879PS uhf power ldmos transistor 5. thermal characteristics [1] r th(j-c) is measured under rf conditions. 6. characteristics [1] i d is the drain current. [2] capacitance values without internal matching. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l(av) =95w [1] 0.15 k/w table 6. dc characteristics t j =25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 2.4 ma [1] 104 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 240 ma [1] 1.4 1.9 2.4 v i dss drain leakage current v gs =0v; v ds =42v - - 2.8 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -38- a i gss gate leakage current v gs =10v; v ds = 0 v - - 280 na r ds(on) drain-source on-state resistance v gs =v gs(th) +3.75 v; i d =8.5a [1] - 120 - m ? c iss input capacitance v gs = 0 v; v ds =42v; f=1mhz [2] - 210 - pf c oss output capacitance v gs = 0 v; v ds =42v; f=1mhz -72- pf c rss reverse transfer capacitance v gs = 0 v; v ds =42v; f=1mhz -1.5- pf table 7. rf characteristics rf characteristics in nxp production narrowband test circuit; t case =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit 2-tone, class-ab v ds drain-source voltage - 42 - v i dq quiescent drain current [1] -1.3- a p l(av) average output power f 1 = 860 mhz; f 2 =860.1mhz 200 - - w g p power gain f 1 = 860 mhz; f 2 =860.1mhz 20 21 - db ? d drain efficiency f 1 = 860 mhz; f 2 =860.1mhz 43 47 - % imd3 third-order intermodulation distortion f 1 = 860 mhz; f 2 =860.1mhz - ? 33 ? 29 dbc blf879p_BLF879PS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 4 of 16 nxp semiconductors blf879p; BLF879PS uhf power ldmos transistor [1] i dq for total device [2] measured [dbc] with delta marker at 4.3 mhz from center frequency. [3] par (of output signal) at 0.01 % probability on ccdf; par of input signal = 9.5 db at 0.01 % probability on ccdf. 6.1 ruggedness in class-ab operation the blf879p and BLF879PS are capable of withstanding a load mismatch corresponding to vswr = 40 : 1 through all phases under the following conditions: v ds =42v; f = 860 mhz at rated power. dvb-t (8k ofdm), class-ab v ds drain-source voltage - 42 - v i dq quiescent drain current [1] -1.3- a p l(av) average output power f = 858 mhz 95 - - w g p power gain f = 858 mhz 20 21 - db ? d drain efficiency f = 858 mhz 30 33 - % imd shldr intermodulation distortion shoulder f = 858 mhz [2] - ? 31 ? 28 dbc par peak-to-average ratio f = 858 mhz [3] -8.2- db v gs = 0 v; f = 1 mhz. fig 1. output capacitance as a function of drain-source voltage; typical values per section table 7. rf characteristics ?continued rf characteristics in nxp production narrowband test circuit; t case =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit aaa-000339 v ds (v) 060 40 20 200 100 300 400 c oss (pf) 0 blf879p_BLF879PS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 5 of 16 nxp semiconductors blf879p; BLF879PS uhf power ldmos transistor 7. application information 7.1 broadband rf figures 7.1.1 dvb-t p l(av) = 95 w; v ds = 42 v; i dq = 1.3 a; measured in a common source broadband test circuit as described in section 8 . p l(av) = 95 w; v ds = 42 v; i dq = 1.3 a; measured in a common source broadband test circuit as described in section 8 . fig 2. dvb-t power gain and intermodulation distortion shoulder as function of frequency; typical values fig 3. dvb-t peak-to-average ratio and drain efficiency as function of frequency; typical values f (mhz) 400 900 800 600 700 500 aaa-000340 16 12 20 24 g p (db) 8 g p lmd shldr lmd shldr (dbc) -30 -40 -20 -10 -50 f (mhz) 400 900 800 600 700 500 aaa-000341 7.5 6.5 8.5 9.5 par (db) d (%) 5.5 30 20 40 50 10 d par blf879p_BLF879PS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 6 of 16 nxp semiconductors blf879p; BLF879PS uhf power ldmos transistor 7.2 impedance information fig 4. definition of transistor impedance table 8. typical push-pull impedance simulated z i and z l device impedance; impedance info at v ds = 42 v and p l(av) = 95 w (dvb-t). f z i z l mhz ? ? 300 0.617 ? j1.715 4.164 + j0.608 325 0.635 ? j1.355 4.101 + j0.636 350 0.655 ? j1.026 4.036 + j0.661 375 0.677 ? j0.721 3.968 + j0.681 400 0.702 ? j0.435 3.898 + j0.696 425 0.731 ? j0.164 3.826 + j0.707 450 0.762 + j0.096 3.753 + j0.713 475 0.798 + j0.347 3.679 + j0.715 500 0.839 + j0.592 3.604 + j0.713 525 0.884 + j0.833 3.528 + j0.706 550 0.936 + j1.072 3.453 + j0.695 575 0.995 + j1.310 3.377 + j0.680 600 1.063 + j1.549 3.302 + j0.661 625 1.141 + j1.791 3.227 + j0.638 650 1.230 + j2.037 3.153 + j0.612 675 1.334 + j2.289 3.079 + j0.582 700 1.456 + j2.548 3.007 + j0.549 725 1.599 + j2.814 2.936 + j0.513 750 1.768 + j3.090 2.866 + j0.474 775 1.971 + j3.376 2.797 + j0.432 800 2.214 + j3.671 2.729 + j0.387 825 2.510 + j3.975 2.663 + j0.340 850 2.873 + j4.282 2.599 + j0.291 875 3.320 + j4.584 2.535 + j0.240 900 3.875 + j4.865 2.474 + j0.186 925 4.562 + j5.095 2.414 + j0.131 950 5.409 + j5.223 2.355 + j0.074 975 6.426 + j5.166 2.298 + j0.015 1000 7.587 + j4.807 2.243 ? j0.045 001aan207 gate 1 gate 2 drain 2 drain 1 z i z l blf879p_BLF879PS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 7 of 16 nxp semiconductors blf879p; BLF879PS uhf power ldmos transistor 7.3 reliability ttf (0.1 % failure fraction). the reliability at pulsed conditions can be calculated as follows: ttf (0.1 %) ? 1 / ? . (1) t j = 100 ? c (2) t j = 110 ? c (3) t j = 120 ? c (4) t j = 130 ? c (5) t j = 140 ? c (6) t j = 150 ? c (7) t j = 160 ? c (8) t j = 170 ? c (9) t j = 180 ? c (10) t j = 190 ? c (11) t j = 200 ? c fig 5. blf879p; BLF879PS electromigration (i ds(dc) , total device) 001aam586 years 10 3 10 10 2 10 6 10 5 10 4 10 7 1 i ds(dc) (a) 0 20 16 8 412 2 18 10 614 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) blf879p_BLF879PS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 8 of 16 nxp semiconductors blf879p; BLF879PS uhf power ldmos transistor 8. test information [1] american technical ceramics type 800r or capacitor of same quality. [2] american technical ceramics type 800b or capacitor of same quality. [3] american technical ceramics type 180r or capacitor of same quality. [4] american technical ceramics type 100a or capacitor of same quality. [5] printed-circuit board (pcb): taconic rf35; ? r = 3.5 f/m; height = 0.762 mm; cu (top/bottom metallization); thickness copper plating = 35 ? m. table 9. list of components for test circuit, see figure 6 , figure 7 and figure 8 . component description value remarks b1, b2 semi rigid coax 25 ? ; 49.5 mm ut-090c-25 (ez 90-25) c1 multilayer ceramic chip capacitor 12 pf [1] c2, c3, c4, c5, c6 multilayer ceramic chip capacitor 8.2 pf [1] c7 multilayer ceramic chip capacitor 6.8 pf [2] c8 multilayer ceramic chip capacitor 2.7 pf [2] c9 multilayer ceramic chip capacitor 2.2 pf [2] c10, c13, c14 multilayer ceramic chip capacitor 100 pf [3] c11, c12 multilayer cera mic chip capacitor 10 pf [2] c15, c16 multilayer cera mic chip capacitor 4.7 ? f, 50 v kemet c1210x475k5rac-tu or capacitor of same quality. c17, c18, c23, c24 multilayer ceramic chip capacitor 100 pf [2] c19, c20 multilayer ceramic chip capacitor 10 ? f, 50 v tdk c570x7r1h106kt000n or capacitor of same quality. c21, c22 electrolytic capacitor 470 ? f, 6 3 v c30 multilayer ceramic chip capacitor 10 pf [4] c31 multilayer ceramic chip capacitor 9.1 pf [4] c32 multilayer ceramic chip capacitor 3.9 pf [4] c33, c34, c35 multilayer ceramic chip capacitor 100 pf [4] c36, c37 multilayer cera mic chip capacitor 4.7 ? f, 50 v tdk c4532x7r1e475mt020u or capacitor of same quality. l1 microstrip - [5] (w ? l) 15 mm ? 13 mm l2 microstrip - [5] (w ? l) 5 mm ? 26 mm l3, l32 microstrip - [5] (w ? l) 2 mm ? 49.5 mm l4 microstrip - [5] (w ? l) 1.7 mm ? 3.5 mm l5 microstrip - [5] (w ? l) 2 mm ? 9.5 mm l30 microstrip - [5] (w ? l) 5 mm ? 13 mm l31 microstrip - [5] (w ? l) 2 mm ? 11 mm l33 microstrip - [5] (w ? l) 2 mm ? 3mm r1, r2 wire resistor 10 ? r3, r4 smd resistor 5.6 ? 0805 r5, r6 wire resistor 100 ? r7, r8 potentiometer 10 k ? xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx blf879p_BLF879PS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 9 of 16 nxp semiconductors blf879p; BLF879PS uhf power ldmos transistor see table 9 for a list of components. fig 6. class-ab common source broadband amplifier; v d1(test) , v d2(test) , v g1(test) and v g2(test) are drain and gate test voltages 9 * w h v w 9 ' w h v w 9 ' w h v w & |